Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
نویسندگان
چکیده
Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China University of Portsmouth, Faculty of Science, SEES, Burnaby Building, Portsmouth PO1 3QL, UK Department of Electronic Engineering, Dalian Neusoft University of Information, Dalian 116023, China Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China Namlab gGmbH/TU Dresden, Noethnitzer Strasse 64, 01187 Dresden, Germany
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تاریخ انتشار 2015